One-dimensional electronic systems, either defined by crystallography or topology, are emerging for various application scenarios, including ultra-scaled CMOS technologies and quantum computing. In this talk, I will discuss one-dimensional material platforms for both classical and quantum device applications. In the classical regime, I will present the material growth, device application, and quantum transport of 1D van der Waals material tellurium in this thin film and nanowire form with great potential for next-generation gate-all-around transistors. In the quantum domain, I will demonstrate topologically protected zero-resistance 1D edge states in quantum Hall and quantum anomalous Hall systems. The Quantum Hall effect was observed in tellurium at cryogenic temperatures, leading to the first discovery of the exotic Kramers-Weyl fermions in a semiconductor. Dissipation-less transport in quantum anomalous Hall insulators is also employed for non-reciprocal RF devices compatible with superconducting qubits. This work exemplifies, from an electrical engineer’s perspective, how topological 1D systems can be leveraged for future cryogenic quantum devices towards scalable fault-tolerant quantum computing and hybrid quantum technologies.
Dr. Gang Qiu is a postdoctoral researcher at the University of California, Los Angeles. He received his bachelor’s degree from Peking University in Microelectronics, and his Ph. D. degree in Electrical and Computer Engineering from Purdue University in 2019. He is a recipient of the Birck Williams Scholarship and Bilsland Dissertation Fellowship. His research focuses on novel low-dimensional materials for advanced electronics and quantum applications. His current research interest includes employing topological materials for topological quantum computing as well as cryo-electronics amalgamating the quantum-classical divide.