In this talk, an introduction of WBG lab at NTHU will be given to the audience. Three examples of the research outcomes in three major semiconductors for power devices, SiC, GaN, and Si, will be given. First, a novel termination called CD-JTE for SiC vertical devices was proposed and demonstrated. As a result of high tolerance to surface charges, SiC DMOSFETs with CD-JTE showed excellent radiation hardness against gamma rays compared with Si IGBTs. Second, an AlGaN/GaN light-emitting HEMT was proposed and demonstrated, in an attempt to combine the electrical function of a HEMT and the optical function of an LED in a single device. Third, a theoretical analysis was done for dielectric RESURF in Si power devices. The dielectric RESURF concept was then further applied to high-voltage FinFETs.
Chih-Fang Huang received his Ph.D. degree from the School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, in 2003. His doctoral work was focused on the design, fabrication and characterization of 4H-SiC BJTs for power electronic applications. Since 2005, he has been with the Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, where he is currently a Professor. His current research interests include wide bandgap semiconductors, RF and power devices. He is the author/co-author of more than 100 journal/conference papers and is inventor of more than 10 US patents. He served as technical committee member for several important internal conferences, including ISPSD, ICSCRM, and SSDM. cfhuang@ee.nthu.edu.tw