This seminar provides an overview of the advantages and disadvantages of silicon carbide (SiC) power semiconductors and its impact on power electronic systems. Several examples of systems using SiC devices will be presented, and the system level advantages discussed in detail. SiC temperature, efficiency, voltage, and high switching frequency benefits allow novel system applications, with military, avionic, and industrial systems providing the initial applications. As SiC devices become less expensive and used in more systems, the applications will spread into consumer and other cost sensitive systems. However, there are disadvantages for SiC semiconductors. The high switching frequency and fast switching transitions create severe electromagnetic interference (EMI) issues. EMI issues will be identified, along with layout and construction solutions.
Dr. Schutten received his Ph.D. and Master’s degrees in Electric Power Engineering from Rensselaer Polytechnic Institute. From 1987 to 2020 he was a senior member of the technical staff at the General Electric Global Research Center. He presently works as a consultant (emi-support.com) specializing in electromagnetic interference issues, with an emphasis on SiC power converter issues. He is actively involved with industrial, commercial, and military EMI topics. Mike is a former member of the CISPR 11 U.S. working group. His experience includes development of novel EMI testing and injection equipment. Mike has developed several high density, low noise power converters for consumer, industrial and military applications. He has taught dozens of EMI seminars at universities, government laboratories, and IEEE conferences. His areas of expertise include electromagnetic interference, power electronics, nonlinear control theory, and analog electronics. Mike has 34 issued patents and multiple journal and conference papers.