Diamond presents an alluring semiconductor platform for active electronics device development such as field effect transistors, due to its large bandgap, high thermal conductivity and high intrinsic hole and electron mobility. Accessing this potential in electronic applications has thus far proven difficult as is largely attributed to the challenges associated with substitutional doping of diamond.
The unique and highly tuneable surface properties of the diamond surface, in terms of chemistry and resultant dipole formation, provide alternative and highly exploitable mechanisms to both dope and produce high performance lateral electronic devices. This includes so called "Transfer Doping", whereby electron transfer from the diamond valance band to a surface electron acceptor material may be used to form a high-density 2D hole channel in the diamond.
In this talk, a review of progress in the development of diamond FET technology will be presented, both with respect to work undertaken at Glasgow and externally, coupled with discussion into the potential future of diamond-based electronics.
David Moran is Professor of Advanced Semiconductors at the University of Glasgow (UoG) and lead of the Advanced Semiconductor Materials and Devices group. His research focuses on the exploration of emerging semiconductor materials for electronic applications. For over 15 years he has worked on the development of single crystal diamond for electronic applications, highlights of which include demonstration of the highest frequency performance diamond transistor produced at the time and pioneering of new techniques for high performance and temperature-stable transfer doping in diamond.