Advanced patterning comprises a series of process steps—lithography, deposition, and etch—that define the extremely small and intricate features of integrated circuits. With each technology generation, device dimensions continue to shrink, driven by advances in lithography. Extreme ultraviolet (EUV) lithography at a 13.4 nm wavelength is now in high-volume manufacturing, while high-numerical-aperture (high-NA) EUV is under development.
Lam provides a comprehensive portfolio of solutions, including deposition products such as hardmasks, dry EUV resists, and advanced pattern transfer technologies. Lam’s Aether® dry resist technology has been adopted for high-volume manufacturing, breaking traditional trade-offs among resolution, sensitivity, line-edge roughness, and defectivity—while delivering full productivity entitlement for 0.33 NA EUV lithography.
Dry resist technology introduces unique process knobs that enable performance improvements over conventional EUV resists. In this talk, we highlight recent progress in dry resist development and demonstrate how Lam’s patterning innovations address critical scaling challenges for high-NA EUV lithography in both memory and logic applications.
Technical Director with 16+ years’ expertise in advanced patterning and EUV process development. Proven success in establishing and leading multi-site, multi-disciplinary teams R&D teams, leading joint development projects, and driving technical innovation for new product introduction. Skilled in project management, and engaging clients on technical development projects with proven track record within Albany NanoTech Complex's ecosystem. Recognized for co-authoring +60 papers and holding +70 US patents, demonstrating a strong commitment to building technical teams and IP generation.